PROCESS FOR MANUFACTURE OF DEVICE WITH REGION OF VIRTUAL PHASE WITH TRANSFER OF CHARGE Russian patent published in 1996 - IPC

Abstract SU 1782139 A1

FIELD: electronics. SUBSTANCE: invention is intended for manufacture of integrated circuits and semiconductor devices of various assignment. In accordance with process operation of ion doping to create stepped profile of doping is carried out in sequence with three stages opening windows in conductive layer equal to dimension of each step of doping profile in vertical phase starting from maximum doping. After this operations of formation of region virtual phase are performed. EFFECT: expanded application field. 4 dwg

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SU 1 782 139 A1

Authors

Krymko M.M.

Managarov V.D.

Markov A.N.

Dates

1996-12-27Published

1989-12-05Filed