FIELD: electronics. SUBSTANCE: invention is intended for manufacture of integrated circuits and semiconductor devices of various assignment. In accordance with process operation of ion doping to create stepped profile of doping is carried out in sequence with three stages opening windows in conductive layer equal to dimension of each step of doping profile in vertical phase starting from maximum doping. After this operations of formation of region virtual phase are performed. EFFECT: expanded application field. 4 dwg
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Authors
Dates
1996-12-27—Published
1989-12-05—Filed