FIELD: technologies for manufacturing integration circuits and semiconductor devices, possible use for manufacturing integration circuits and semiconductor devices for various purposes.
SUBSTANCE: method includes operations of oxidizing of photo-lithography, ion alloying and thermal annealing. After oxidizing, high-ohm poly-silicon is applied, in which windows are serially opened above areas being alloyed, starting from area with maximal alloying level. After each opening of windows ion alloying is performed, then simultaneous thermal annealing of alloyed areas is performed. After that conductive layer is formed, windows are opened above area of virtual phase which are then alloyed with admixture of opposite conductivity type in comparison with next activating annealing.
EFFECT: increased efficiency of production with simultaneous simplification of manufacturing process, increase of integration level and non-defective product percentage.
1 dwg
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