FIELD: electronics. SUBSTANCE: in process of manufacture of charge-coupled device with virtual phase stop channels and latent channel are formed by ion doping. Then dielectric layer under gate, conductive layers and photoresist layers are deposited, windows above region of virtual phase are open. After deposition of photoresist windows above region having maximum level of doping are open and subsequent ion doping into windows is conducted with energy equal to energy of formation of latent channel with relation of phases inversely proportional to relation of areas of clock electrode and virtual phase. EFFECT: facilitated manufacture. 7 dwg
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