FIELD: semiconductor instrumentation engineering. SUBSTANCE: essence of invention consists in that in compliance with method registration of spectrum of exciton reflection or luminescence from crystallographically equivalent surfaces from different points of sample is carried out, value of shift of exciton lines is found. By comparison of obtained value with half-width of exciton absorption of standard sample having one extreme compositions of investigated sample homogeneity of composition is inspected for any semiconductor materials. Sample which value of shift of exciton line in its spectra does not exceed half-width of line of exciton absorption of standard sample is considered homogeneous in composition. EFFECT: improved reliability and simplification of method.
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