FIELD: electronic engineering. SUBSTANCE: photodetectors of multielement photordetector device are added with charge-accumulating cell, in particular, with MIS-structure or MIS-structure with low-ohmic layer of semiconductor, located under dielectric layer. EFFECT: widened working frequency range. 3 cl, 3 dwg
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Authors
Dates
1996-04-20—Published
1990-06-12—Filed