FIELD: physics.
SUBSTANCE: heat-sensitive field device has a capacitor with a metal-insulator-semiconductor (MIS) structure with a movable conducting field electrode suspended on a bimorph cantilever over a semiconductor substrate. Part of the cantilever consists of two or more layers with different coefficients of thermal expansion. The cantilever bends under the heating effect of thermal radiation, thereby effectively changing the value of the insulating gap between the conducting electrode and the semiconductor substrate, which enables thermal modulation of the value of mobile charge or electric current in the surface region of the semiconductor.
EFFECT: design of a device with high thermal sensitivity owing to use of a deep depletion mode in the structure with charge accumulation.
4 dwg
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