FIELD: microelectronics; miscellaneous semiconductor devices.
SUBSTANCE: proposed method includes immersion of semiconductor wafer in first electrolyte incorporating organic solvent, electricity conducting component, and halogen-containing dope followed by energizing the wafer. Halogen-containing dope used for the purpose is ammonium fluoride taken in the amount of 1.6-1.8 mass percent. Semiconductor wafer anodized in first electrolyte is then immersed in second electrolyte incorporating same amount of organic solvent and electricity conducting component as first one for anodizing this wafer. In the process anodizing in both electrolytes is made to same voltage.
EFFECT: reduced intrinsic charge and density of traps in insulating films.
1 cl, 3 dwg
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