FIELD: integrated microelectronics. SUBSTANCE: reading set based on charge-coupled devices for two-dimension image receivers is arranged on semiconductor backing and has matrix of cells of input devices. Each input device has input diffusion region with conductance type opposite to that of backing and input gate placed on dielectric layers. Each column has transfer gate, input diffusion region, two MIS transistors, multioutput output commutator, control wire of input gates, comon reading wire, common recording wire. Gates of MIS transistors are connected to proper outputs of multioutput commutator, source of first MIS transistor is linked to common reading wire, drain is coupled to output diffusion region. Source of second MIS transistor is connected to common recording wire, drain - to recording gate. Matrix of input devices is manufactured from fragments composed of four cells of input devices. It is supplemented with second control wire of input gates, cell of four-phase CCD register. Input gates of one column of fragment are integrated by first common control wire of input gates and charge-coupled to first and third transfer gates correspondingly. EFFECT: higher efficiency.
