METHOD FOR CONTROLLING RADIATION PARAMETERS OF SEMICONDUCTOR MATERIALS Russian patent published in 1995 - IPC

FIELD: optoelectronics. SUBSTANCE: in order to improve parameters of infrared radiation with adjustable working wavelength, use is made of semiconductor material possessing inherent conductance and positive or negative barometric coefficient of forbidden region width which is compressed on all sides within pressures P between atmospheric value and pressure equal to 2kT/q1n , where λ_o is radiation wavelength of uncompressed semiconductor, N_c,N_v is density of states in conductance zone and in valence zone, respectively; q is barometric coefficient of forbidden zone width; N_admixtures is concentration of admixtures; K is Boltzmann constant; T is temperature; h is Planck constant; c light speed. When mentioned semiconductor InSb is used, radiation spectrum stepless control range is 6.9-3.5 mcm. EFFECT: enlarged stepless control range of positive and negative contrast radiation spectrum parameters with maximum efficiency of positive contrast radiation output. 4 dwg