SEMICONDUCTOR DIODE FOR IR SPECTRAL RANGE Russian patent published in 2006 - IPC H01L33/00 H01L31/12 

FIELD: semiconductor engineering.

SUBSTANCE: device belongs to diode sources and receivers, which radiate and receive radiation from surface in IR spectral range. The device can be used in gas analysis devices, spectrometers, and detection and communication systems. Semiconductor device for IR spectral range, which diode ahs p- and n- areas with current-conducting contacts separated by p-n junction, active area, which is electrically connected with p-n junction, and at least one optical module. The module is optically connected with active area by means of optical compound. The module has thickness which does not exceed value of reverse value of average absorption factor of module within working range of quantum energies. The active area is made with prohibited area thickness being compared with energy of quantum of working spectral range.

EFFECT: improved specific spectral energy; widened functional abilities of diode.

16 cl, 3 dwg