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2 025 833

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IPC

(21) (22)

Application

4930037/25, 1991-04-22

(22)

Actual filing date

1991-04-22

(45)

Published

1994-12-30

(72)

Inventor

Bolgov Sergej Semenovich[Ua]Jablonovskij Evgenij Ivanovich[Ua]Saljuk Ol'Ga Jur'Evna[Ua]Konstantinov Vjacheslav Mikhajlovich[Ru]Igumenov Valerij Timofeevich[Ru]Morozov Vladimir Alekseevich[Ru]

(73)

Holder

Institut Fiziki Poluprovodnikov An Ukrainy

INFRARED SEMICONDUCTOR RADIATOR Russian patent published in 1994 - IPC

Abstract RU 2025833 C1

FIELD: optoelectronics. SUBSTANCE: infrared semiconductor radiator has active narrow-zone layer with bipolar conductance with thickness comparable with diffusion length, wide-zone substrate, antireflection and focusing layers. Ohmic contacts are made on active layer. Doped layer with concentration of impurities determined by expression specified in description of invention is formed on radiation surface. EFFECT: improved operational characteristics. 1 dwg

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RU 2 025 833 C1

Authors

Bolgov Sergej Semenovich[Ua]

Jablonovskij Evgenij Ivanovich[Ua]

Saljuk Ol'Ga Jur'Evna[Ua]

Konstantinov Vjacheslav Mikhajlovich[Ru]

Igumenov Valerij Timofeevich[Ru]

Morozov Vladimir Alekseevich[Ru]

Dates

1994-12-30—Published

1991-04-22—Filed