SEMICONDUCTOR SOURCE OF INFRARED RADIATION Russian patent published in 2005 - IPC

FIELD: semiconductors.

SUBSTANCE: device has emitting surface, recombination area, not less than one passive layer, transparent for emission with hv energy, at least one of layers is made with n-type of conductivity and at least one of said layers is positioned between recombination area and emitting surface, not less than one heat-draining surface and node for connection to outer energy source. Concentration of free carriers (n) and width of forbidden zone (E₁) in aforementioned passive layer match relations: where hv and Δhv_0.5 - quant energy and half-width of spectrum of emission, formed in recombination zone, respectively, eV, and n_deg - concentration of carriers, at which degeneration of conductivity zone starts, cm^-3.

EFFECT: increased radiation strength, increased spectral range of source.

12 cl, 12 ex, 6 dwg