INTEGRAL SEMICONDUCTOR PRESSURE TRANSDUCER AND PROCESS OF ITS MANUFACTURE Russian patent published in 1995 - IPC

Abstract SU 1835913 A1

FIELD: measurement technology. SUBSTANCE: profiled membrane of converter is formed by flat plate 1 and frame 2 produced from identical monocrystalline material with matching of their equivalent crystallographic directions. Plate 1 and frame 2 can be attached by different methods: diffusion welding in vacuum directly or through more easily melted layer with thin layer of binder, for instance, glass cement, adhesive and so on. EFFECT: enhanced precision and sensitivity of converter, facilitated manufacture. 5 cl, 3 dwg

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SU 1 835 913 A1

Authors

Evdokimov V.I.

Papkov V.S.

Smyslov I.I.

Surovikov M.V.

Dates

1995-09-10—Published

1990-02-14—Filed