FIELD: manufacture of semiconductor devices. SUBSTANCE: protective coat is deposited on surface of silicon when forming membranes, windows are open in protective coat and layer of porous silicon of specified depth is formed through windows on nonworking side of substrate by anode treatment in solution of hydrofluoric acid. Then nonworking side of substrate is protected by chemically stable coat. Holes up to porous silicon are formed on working side in layer of monocrystalline silicon and porous silicon is removed by etching in solution of alkali containing ethylene glycol in addition. EFFECT: expanded application field and increased efficiency of process. 1 dwg
