DOUBLER OF FREQUENCY FROM ULTRA HIGH FREQUENCY RANGE Russian patent published in 2006 - IPC H03B19/10 

FIELD: engineering of frequency doublers on semiconductor diodes, parameters of which depend on value of voltage applied to them.

SUBSTANCE: device contains input and output coaxial sockets, input circuit, output contour, diode shifting circuits, consisting of high frequency throttles, blocking capacitors and resistors, while input circuit is made in form of adjustable communication capacitor, symmetrical resonance contour, formed by a portion of line, open on two sides, and two variable capacitors, connected at open ends of aforementioned line, while diodes are separated from one another by two serially connected capacitors of constant capacity.

EFFECT: decreased level of odd harmonics and excluded selection of diodes with identical characteristics.

1 dwg