NANOSECOND PULSE SEMICONDUCTOR GENERATOR Russian patent published in 1994 - IPC

Abstract RU 2009611 C1

FIELD: semiconductor electronics. SUBSTANCE: semiconductor generator has drift diode which has abrupt restoration, back current circuit formed by capacitor, inductance coil and commutator, direct current circuit formed by capacitor, inductance coil and commutator, load circuit, charging unit, shunting diode. Commutator of back current circuit may be made in form of a choke provided with saturated core. EFFECT: reduced losses of energy in generator. 2 cl, 1 dwg

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RU 2 009 611 C1

Authors

Grekhov I.V.

Efanov V.M.

Kardo-Sysoev A.F.

Korotkov S.V.

Dates

1994-03-15—Published

1991-04-30—Filed