FIELD: crystal raising. SUBSTANCE: apparatus has a vertical type reactor, in the upper part of which there are means for hydrogen and a gas mixture feeding. The mean of the gas mixture feeding is made in the shape of perforated branch pipe, placed in the reactor axis and inside its cavity. A hollow perforated cylinder is mounted coaxially to the b ranch pipe, on the inner surface of which bases are situated. A disk form screen is placed over the perforated cylinder. The reactor base has a cavity, separated from the reacting space by perforated partition and communicating with the means of gas output. There are ratios, defining size and placement of the screen, and ratios of total areas of holes in the cylinder, partition and a branch pipe. EFFECT: apparatus is effective for crystal raising. 1 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| WASHING MACHINE | 1990 |
|
RU2010063C1 |
| APPARATUS FOR SEMICONDUCTING MATERIALS EPITAXIAL LAYERS GROWING | 0 |
|
SU1813819A1 |
| DEVICE FOR DEPOSITING LAYERS FROM VAPOUR PHASE | 0 |
|
SU1686044A1 |
| CVD REACTOR FOR SYNTHESIS OF HETEROEPITAXIAL SILICON CARBIDE FILMS ON SILICON SUBSTRATES | 2021 |
|
RU2767098C2 |
| METHOD FOR PRODUCTION OF EPITAXIAL STRUCTURES ON GALLIUM ARSENIDE SUBSTRATE | 1990 |
|
SU1800856A1 |
| METHOD OF OBTAINING EPITAXIAL LAYER OF BINARY SEMICONDUCTOR MATERIAL ON MONOCRYSTALLINE SUBSTRATE BY ORGANOMETALLIC CHEMICAL VAPOUR DEPOSITION | 2013 |
|
RU2548578C2 |
| REACTOR FOR OBTAINING EPITAXIAL LAYER OF BINARY SEMICONDUCTOR MATERIAL ON MONOCRYSTALLINE SUBSTRATE BY MEANS OF ORGANOMETALLIC CHEMICAL VAPOUR DEPOSITION | 2024 |
|
RU2824739C1 |
| METHOD FOR PRODUCING EPITAXIAL STRUCTURES IN THE BASIS OF GALLIUM ARSENIDE | 1990 |
|
RU1771335C |
| METHOD FOR PRODUCING EPITAXIAL GALLIUM ARSENIDE LAYERS | 1990 |
|
RU1820783C |
| METHOD AND DEVICE FOR PRODUCING NONPLANAR EPITAXIAL SILICON STRUCTURES BY WAY OF GAS-PHASE EPITAXY | 2005 |
|
RU2290717C1 |
