REACTOR FOR OBTAINING EPITAXIAL LAYER OF BINARY SEMICONDUCTOR MATERIAL ON MONOCRYSTALLINE SUBSTRATE BY MEANS OF ORGANOMETALLIC CHEMICAL VAPOUR DEPOSITION Russian patent published in 2024 - IPC H01L21/205 

FIELD: microelectronics.

SUBSTANCE: invention relates to microelectronics and can be used in production of epitaxial structures of semiconductor compounds A3B5 and compounds A2B6 by chemical vapour deposition from organometallic compounds and hydrides. According to the invention, a reactor for producing an epitaxial layer of a binary semiconductor material on a monocrystalline substrate by organometallic chemical vapour deposition includes reaction chamber (13), made of round shape in plan, substrate holder (2), made with possibility of rotation relative to axis (14), installed horizontally inside said chamber (13), drive made with possibility of uniform rotation of substrate holder (2) relative to axis (14), screen (8), having a circular shape in plan and installed inside said chamber (13) above substrate holder (2), gas removal means (11, 15) located near axis (14), heating means configured to maintain a predetermined temperature, injector (1) comprising at least three annular chambers provided with gas feed holes arranged along the perimeter of reaction chamber (13) in a substantially horizontal plane so as to enable formation of sectors of radial flow of gas streams, including streams of precursors and transport gas, wherein all chambers are divided by partitions into at least two arched cavities, at least one of which is configured to supply transport gas, wherein chambers are divided into cavities, made so that in chamber (13) sectors of radial flow of gases are formed, in one sector there is a first precursor (OMC), in the opposite sector there is a second precursor (hydride), and between these sectors two sectors with transport gas are formed.

EFFECT: invention provides improved quality of heteroepitaxial structures.

23 cl, 6 dwg