METHOD FOR PRODUCTION OF EPITAXIAL STRUCTURES ON GALLIUM ARSENIDE SUBSTRATE Russian patent published in 1995 - IPC

Abstract SU 1800856 A1

FIELD: production of semiconductor structures. SUBSTANCE: gallium arsenide substrates heated up to 540-640 C at pressure of 1-5 mm Hg is subjected to polishing etching in the medium of hydrogen plasma of HF-glow discharge with addition of arsine, them, layers of metalloorganic compounds are grown by hydride method. EFFECT: reduced etching selectivity and simplified etching process.

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SU 1 800 856 A1

Authors

Zakharov A.A.

Nesterova M.G.

Pashchenko E.B.

Shubin A.E.

Dates

1995-06-19—Published

1990-05-16—Filed