METHOD OF OBTAINING EPITAXIAL LAYER OF BINARY SEMICONDUCTOR MATERIAL ON MONOCRYSTALLINE SUBSTRATE BY ORGANOMETALLIC CHEMICAL VAPOUR DEPOSITION Russian patent published in 2015 - IPC H01L21/205 

FIELD: chemistry.

SUBSTANCE: invention relates to microelectronics and can be used in producing epitaxial structures of semiconductor compounds A3B5 and A2B6 by chemical vapour deposition of organometallic compounds and hydrides. A method of producing an epitaxial layer of a binary semiconductor material on a monocrystalline substrate through organometallic chemical vapour deposition employs a reactor with a vertical reaction chamber which is circular relative to a central vertical axis, a horizontally mounted substrate holder, mounted in the reaction chamber to allow rotation about said axis, a circular shield mounted in said reaction chamber at a distance of about 15-40 mm over said substrate holder and having a larger diameter than said substrate holder, wherein a predetermined temperature of the uniformly rotating substrate holder is maintained, at least two reaction gases are separately fed into different radial sectors of the reaction chamber, wherein the reaction gases and a carrier gas are fed in a manner that allows flow thereof in a radial direction within the reaction chamber at the same rate at the same diameter in all sectors.

EFFECT: improved quality of heteroepitaxial structures.

7 cl, 4 dwg