METHOD OF GENERATION OF IMAGE OF DEFECTS OF SEMICONDUCTOR PLATES OF LARGE AREA AND DEVICE FOR ITS IMPLEMENTATION Russian patent published in 1994 - IPC

FIELD: microelectronics. SUBSTANCE: for increase of resolving power and sensitivity of measurements point-by-point discrete scanning of microsections plate with laser probe, diameter 15.0 mm, is conducted. Photoelectric signals corresponding to most intensified electrically active defects having smallest values are measured. Images of these defects are formed on screen of display. Number of points in line and number of lines in each microsection are chosen in agreement with scanning spacing and resolving power of display. Device for implementation of method is supplemented with chamber for ion precipitation, electrode to pick off photoelectric signal, amplifier of these signals, unit for control over scanner and display. EFFECT: facilitated manufacture. 2 cl, 3 dwg