METHOD OF REMOVAL OF DEFECTS IN MASK COATING Russian patent published in 1994 - IPC

FIELD: semiconductor devices production. SUBSTANCE: light guide is introduced into the dish, filled with retouching liquid; the light guide illuminates the mask from the side of masking coating. After the defect is detected in transmitted light, irradiated by the light guide, the liquid is heated till its temperature reaches the temperature being less than boiling temperature of metal-organic compound. Due to thermal expansion surface of the liquid id brought into contact with corresponding detect part, that provides its local application onto the masking coating. After that visual or UV-range laser radiation with power density of 10³-10⁷Wt/cm² is focused onto liquid-mask boundary in the area of defect part; then the boundary is heated higher than temperature of decomposition of organo-metallic compound. As a result metal-containing layer is deposited onto defect part of masking coating. EFFECT: improved efficiency; improved quality of the layer, formed onto defect parts of the coating. 3 dwg