METHOD OF FORMING OF MASK MASKING LAYER Russian patent published in 1994 - IPC

FIELD: microelectronics. SUBSTANCE: mask substrate is placed in a space with gaseous compound. A plate transmitting laser radiation with formation of a gap equal to 0.01 to 2 mm is placed above the substrate working face. Laser radiation of visible or ultraviolet region is focused through the plate on the substrate surface. Thermal decomposition of compound molecules located in the gap between the substrate and plate and adsorbed on their surfaces occurs under the effect of radiation treatment with forming of masking layer. Use of a semitransparent plate with transmission of at least 50% at the wave-length of laser radiation makes it possible to decrease the process power intensity. In this case the half-angle at the vertex of the light cone of laser radiation converging on the substrate surface makes up at least 20° (which conforms to a solid angle of 0.12 Π). EFFECT: facilitated procedure. 2 cl, 2 dwg