FIELD: integrated circuit manufacture.
SUBSTANCE: proposed manufacturing process for photon integrated circuit that has complicated semiconductor structure with quantum well region includes irradiation of structure using photon source for generating defects, photon energy E being not lower than displacement energy Ed of one element of compound semiconductor. Then structure is subjected to annealing to encourage mixture of quantum wells. Preferable radiation source is plasma generated with aid of electronic cyclotron resonance system. Structure can be masked in any way to ensure its selective mixing by controlling exposure of structure sections.
EFFECT: ability of mixing quantum wells by structure irradiation with photon radiation source.
16 cl, 14 dwg
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