METHOD OF FORMING THREE-DIMENSIONAL STRUCTURES OF FUNCTIONAL LAYER TOPOLOGICAL ELEMENTS ON THE SURFACE OF SUBSTRATES Russian patent published in 2019 - IPC C23C16/04 C23C16/455 

FIELD: manufacturing technology.

SUBSTANCE: invention relates to production of integrated microcircuits and microelectromechanical devices and can be used for formation of three-dimensional structures of topological elements of functional layers on the surface of substrates without using photomasks and masking photoresist. Method of forming three-dimensional structures of functional layer topological elements on the surface of a silicon substrate includes placing a substrate in a vacuum reaction chamber, pumping reaction chamber, local irradiation of substrate from external source, supply to substrate reagent, from which on irradiated local areas of substrate deposited topological elements with three-dimensional structures of functional layer. Local irradiation of the substrate is carried out using a laser on either side of the substrate with energy of irradiation from an external source exceeding the energy of desorption of the deposited material on it. Delay time between switching on of external source for local irradiation and beginning of reagent feed is not less than 100 ns, and deposited material represents atoms of indium or aluminum.

EFFECT: higher energy efficiency of the process and high uniformity of the deposited layer in the structure due to irradiation from any side of the substrate, low cost of the structure of the article and shorter time for deposition of the layer by using one reagent.

1 cl, 3 dwg, 2 ex