METHOD FOR OBTAINING THE SENSITIVITY DISTRIBUTION OVER THE MATRIX PHOTODETECTOR PIXEL AREA Russian patent published in 2022 - IPC H01L31/18 

FIELD: semiconductor devices.

SUBSTANCE: invention relates to the technology of manufacturing semiconductor photodetectors (PD) and can be used to create matrix photodetectors (MPD) for various purposes, including hybrid MPDs. Method for obtaining the sensitivity distribution over the matrix photodetector (MPD) pixel area using a scanning mask at the temperature of liquid nitrogen includes the measurements being conducted by the non-destructive method using a plate transparent in the MPD spectral sensitivity area with opaque areas partially covered with a metal layer, wherein the metal surface of said plate is brought in contact directly with the MPD by gravity in the open-type probe unit, and the plate is aligned by the angle of rotation in the horizontal plane when the probe manipulator is raised with a fixed arrangement of contacts relative to the reading LSIC up to the level of the upper edge of the plate cut along lines parallel to the direction of arrangement of the windows in the mask, and shifting the plate along the axis perpendicular to the alignment line of the fixed probes; and prior to placing the plate with the mask, the MPD being calibrated with two-point correction in order to level the sensitivity.

EFFECT: possibility of promptly obtaining the sensitivity distribution over the matrix photodetector pixel area, used to calculate such important parameters as the value of correlation and the modulation transfer characteristic, by means of a non-destructive method for scanning mask based on an open probe-based unit.

6 cl, 20 dwg, 3 ex