METHOD OF MAKING MULTILEVEL COMMUTATION OF INTEGRATED CIRCUITS Russian patent published in 1994 - IPC

FIELD: microelectronics. SUBSTANCE: polyimide film is applied onto integrated circuit with first-level-commutation conductors for interlayer isolation. Then integrated circuit is loaded into reaction chamber and irradiated from its face side with UV-range laser radiation at wavelength 240-400 nm in aluminum hydride amine complex gaseous compound (mainly trimethylaluminum hydride). During illumination the windows are developed in polyimide film for interlayer contacts by means of laser ablation at power density in the pulse being no less than 5 J/сm² and duration of the pulse less than 0,5·10^-6s. Second-level conductors and interlevel contacts are formed by means of local laser-chemical deposition of aluminum at laser radiation power density, which doesn't excess over 10⁷Вт/сm² and pulse duration being no less than 10^-6s. EFFECT: improved productivity; reduced resistances of conductors. 2 cl, 2 dwg