MEMORY CELL Russian patent published in 1994 - IPC

FIELD: microelectronics. SUBSTANCE: memory cell has communication IGFET and reservoir capacitor disposed above the IGFET. Physical layers of reservoir capacitor and communication transistor are formed onto the surface of groove of two polyhedrons, which have more than five faces, separated by region of semiconductor material, which has the other type of conductivity. This region acts as drain region of communication transistor. EFFECT: improved efficiency. 5 dwg