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2 030 814

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IPC

(21) (22)

Application

92001058/25, 1992-10-16

(22)

Actual filing date

1992-10-16

(45)

Published

1995-03-10

(72)

Inventor

Durov Vladimir VladimirovichGorbunov Jurij IvanovichIl'Chinskij Evgenij StepanovichLatyshonok Aleksandr NikodimovichRudovol Tamara VsevolodovnaShevchenko Aleksandr Vasil'EvichKrikorov Vadim Sergeevich

(73)

Holder

SEMICONDUCTOR TEMPERATURE ELEMENT Russian patent published in 1995 - IPC

Abstract RU 2030814 C1

FIELD: semiconductor microelectronics. SUBSTANCE: element has two high-alloyed regions of n- and p-type semiconductor material. These regions are isolated by two low-alloyed regions of p- and n-type semiconductor material. Protective insulating layers are applied to high-alloyed regions. Ports are provided in protective layers for ohmic contacts to high-alloyed regions. Width of each low-alloyed region is twice or thrice as high as maximum diffusion lengths of minority charge carriers injected from adjacent high-alloyed regions. EFFECT: improved design. 1 dwg

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RU 2 030 814 C1

Authors

Durov Vladimir Vladimirovich

Gorbunov Jurij Ivanovich

Il'Chinskij Evgenij Stepanovich

Latyshonok Aleksandr Nikodimovich

Rudovol Tamara Vsevolodovna

Shevchenko Aleksandr Vasil'Evich

Krikorov Vadim Sergeevich

Dates

1995-03-10—Published

1992-10-16—Filed