LARGE-SCALE INTEGRATED CIRCUIT (VERSION) Russian patent published in 1994 - IPC

FIELD: microelectronics. SUBSTANCE: large-scale integrated circuit has base of crystal mount produced from semiconductor monocrystal material with crystallographic orientation (100). On both sides of it there are mounted multilevel commutation systems provided with contacting bodies which form in certain combinations sign positions for monolithic integrated circuits and other microelectronic components mounted by method of turned over crystal. Conductors presenting plates of monocrystal semiconductor material with crystallographic orientation (100) are placed on to surface of base of crystal mount. Bases of both crystal mount and conductor have proper protrusions and blind locating holes which duplicate conform shape and dimensions of guiding protrusions to ensure precision mounted of conductors on surface of base. In volumes present sets of equilateral trapeziums created by crystallographic planes (III) and serving as guides for assembly of crystals of monolithic integrated circuits having shape of truncated pyramids which side surface is also a family of crystallographic planes (III). EFFECT: facilitated manufacture of ultra-high-shaped integrated circuits. 7 cl, 1 dwg