LARGE-SCALE INTEGRATED CIRCUIT (VERSION) Russian patent published in 1994 - IPC

FIELD: microelectronics. SUBSTANCE: large-scale integrated circuit has base of crystal mount on which working surface commutation system with contacting bodies is formed. Certain combination of contacting bodies form sign positions for monolithic integrated circuits formed by method of turned over crystal. Guiding protrusions in the form of truncated pyramids which side surfaces are formed with crystallographic planes III are made in surface of base of crystal mount. In volume of material of body of conductor installed on surface of base of crystal mount there are made blind locating holes which conform duplicate shape of guiding protrusions which provides for precision assembly of structure without use means of technical vision. Through holes conform duplicating shape of crystals of monolithic integrated circuits manufactured in the form of truncated pyramids which side surfaces are crystallographic planes III and which bases are crystallographic planes 100 are formed in volume of body of conductor directly above sign positions of corresponding crystals of monolithic integrated circuits. In this case integration of commutation systems of monolithic integrated circuits and crystal mounts into unified functionally completed device arranged on common base occurs. EFFECT: facilitated manufacture of ultra-high-speed integrated circuits. 7 cl, 1 dwg