LARGE INTEGRAL CIRCUIT Russian patent published in 1996 - IPC

FIELD: microelectronics. SUBSTANCE: circuit has crystal holder, which is designed as plate of single- crystal semiconductor material which crystal is oriented in (100). Physical layers of multiple-level commutation circuit are generated on surface of said plate. Commutation system has contact areas which provide certain combinations for locating crystals which are mounted by means of reverse crystal method, as well as single chip integral circuits and components of micro electronic design. Crystals are made from single-crystal material, are oriented in (100) and shaped as frustum of pyramid which side walls are shaped as sets of equilateral trapeziums which are generated by set of crystal planes {111}. Crystal holder support surface has conductor which is made from single-crystal semiconductor material which has through holes in which crystals of single-chip integral circuits and components are located. Through holes in conductor conform to shape and size of crystals. EFFECT: increased functional capabilities. 1 dwg