METHOD OF DETERMINING PRESENCE OF DISORDERED PHASE IN CRYSTALS OF SEMICONDUCTORS Russian patent published in 1994 - IPC

FIELD: inspection of parameters of semiconductor materials. SUBSTANCE: Raman scattering spectra onto photons are indicated when wave vector of incident light is directed along optical axis; polarization spectra are indicated in perpendicular to the axis; and scattered radiation is indicated at the same polarization in opposite direction. Raman scattering line A₁ is indicated as well. The second spectrum of Raman scattering is achieved when wave vector of incident light is directed in perpendicular to optical axis and at polarization along the axis and scattered radiation is indicated in direction, being perpendicular as to direction of wave vector of incident light, and optical axis at polarization which coincide with direction of wave vector of incident light. Raman scattering line E₁ is indicated either. After the half-width of the lines is measured and broadening is calculated, provided by presence of disordered phase and its value. EFFECT: improved reliability; improved efficiency. 1 dwg