METHOD OF MEASUREMENT FOR CONTROL OF HYDROGEN IN SOLID-STATE MATERIAL Russian patent published in 2014 - IPC G01N21/65 H01L21/66 

FIELD: measurement equipment.

SUBSTANCE: invention relates to the field of material research with the help of optical facilities, and also to technology for manufacturing of semiconducting instruments - for control of hydrogen in the material when developing instruments and structures. In respect to a sample with tested material they register spectrum of combination scattering of light in geometry of back scattering. Measurements are carried out in the range of frequencies of oscillations of binds between atoms of the tested solid-state material and binds between atoms of tested solid-state material and hydrogen. Coherent radiation is directed to a semi-transparent mirror, located between the sample and the spectrometer at the angle, with the possibility to send radiation from the mirror to the sample in direction of the normal line to the surface of the tested material, and radiation reflected by the sample - to the spectrometer. Falling radiation is linearly polarised. Polarisation of scattered light matches polarisation of the falling radiation. They use radiation of the laser of visible range from 400 to 800 nm in continuous mode, with capacity providing for the signal-noise ratio in spectra of combination light scattering from 10 and higher. When selecting a sample with tested material of a substrate from glass or silicon with applied layer of silicon dioxide and applied layer of amorphous silicon with content of atomic hydrogen from 5 to 50%, thickness from 30 to 1000 nm, they register spectrum in the range from 200 to 550 cm^-1 and from 1900 to 2200 cm^-1, accordingly, frequencies of oscillations of binds Si-Si and binds Si-H.

EFFECT: due to use of geometry of back scattering there is no limitation in respect to assortment of substrates and thicknesses of layers when obtaining data for control of hydrogen in solid-state material by concentration and its condition both in respect to layers or instrument structures, formation of which is completed, and also indirectly in process of formation.

5 cl, 2 dwg