FIELD: indicator engineering. SUBSTANCE: process involves application of masking material onto glass blanks covered with deposited current-conducting layer, selective etching of current-conducting layer, and removal of masking material. Masking material is applied by direct planographic printing method; printing ink is used as masking material; its layer thickness is not over 8 microns, layer fixing temperature and time are not over 200 C and 60 minutes, respectively. EFFECT: improved resolution, enlarged functional capabilities.
Title | Year | Author | Number |
---|---|---|---|
CATHODE-LUMINESCENCE SCREEN AND METHOD FOR ITS MANUFACTURING | 1999 |
|
RU2152662C1 |
PROCESS OF MANUFACTURE OF DIELECTRIC PARTS WITH HOLES | 1990 |
|
RU1762690C |
PROCESS FOR MANUFACTURING TEMPLATE | 0 |
|
SU1064352A1 |
PROCESS OF MANUFACTURE OF SEMICONDUCTOR COMPONENTS OF SHF HIGH-POWER TRANSISTOR MICROASSEMBLIES | 1991 |
|
RU2017271C1 |
PROCESS OF PHOTOLITHOGRAPHY | 1996 |
|
RU2096935C1 |
METHOD OF MAKING PRINTED CIRCUIT BOARDS WITH BUILT-IN RESISTORS | 2008 |
|
RU2386225C2 |
MASK AND METHOD OF MANUFACTURING THEREOF | 0 |
|
SU938338A1 |
PROCESS OF MANUFACTURE OF SEMICONDUCTOR DEVICE | 1992 |
|
RU2031483C1 |
STENCIL FOR X-RAY LITHOGRAPHY AND METHOD OF MANUFACTURING SAME | 0 |
|
SU824345A1 |
PROCESS OF FORMATION OF PHOTOLITHOGRAPHIC PATTERN IN SILICON DIOXIDE FILM ON RELIEF SURFACE OF SILICON WAFER | 1993 |
|
RU2111576C1 |
Authors
Dates
1994-09-30—Published
1991-05-12—Filed