FIELD: semiconductor devices. SUBSTANCE: process of manufacture involves formation of active regions of component with local insulating layers of dielectric on silicon plate, creation of two-layer dielectric of silicon dioxide and silicon nitride, opening of windows in two-layer dielectric for contacts, formation of structure of multilayer metallization and formation of topology of metal electrodes. In this case layer of silicon dioxide is formed by thermal oxidation till layer 0.01-0.03 μm thick is created on open surfaces. Opening of windows for contacts is conducted with distance of edge of window from edge of local insulating layer of dielectric equal to summary value of allowance for matching of topology and double thickness of first layer of multilayer metallization. EFFECT: facilitated manufacture. 1 tbl
