TRANSISTOR SWITCH Russian patent published in 1994 - IPC

FIELD: semiconductor switching devices. SUBSTANCE: regenerative transistor switch has two transistors, five diodes, four resistors, two capacitors, two current transformers with primary and secondary windings. Second current transformer, resistor, circuits of series-connected diodes and capacitors shorted out by circuits of series- connected diode and resistor are introduced to attain desired effect. Newly introduced components are connected so that emitter switching of power transistors and proportional-current control are implemented in regenerative transistor switch, current feedback is ensured simultaneously for power and control transistors with the result that speed is increased and secondary breakdown in power transistors is eliminated. EFFECT: improved reliability, enlarged functional capabilities. 5 cl, 3 dwg