FIELD: protection of p-n junctions working at heavy currents and heat transfer conditions. SUBSTANCE: wurtzite boron nitride is introduced in compound having the following composition, mass percent: rolivsan MV-1 - 70; toluene - 5; wurtzite boron nitride - 25. EFFECT: improved thermal conductivity. 2 dwg, 1 tbl
Title | Year | Author | Number |
---|---|---|---|
COMPOUND FOR PROTECTING SEMICONDUCTOR CHIPS | 1991 |
|
RU2022397C1 |
COMPOUND FOR PROTECTING SEMICONDUCTOR CHIPS | 1991 |
|
RU2022398C1 |
COMPOUND PROTECTING P-N JUNCTIONS | 1991 |
|
RU2101802C1 |
METHOD FOR PROTECTION OF SEMICONDUCTOR DEVICES PRIOR TO THEIR SEALING | 1990 |
|
RU2036538C1 |
SEMICONDUCTOR DEVICE MANUFACTURING PROCESS | 1991 |
|
RU2069027C1 |
SILICONE COMPOUND FOR PRODUCING ELECTRICAL COMPONENTS | 2002 |
|
RU2234754C2 |
ELECTRICALLY INSULATED TAPE AND METHOD FOR MAKING SAME | 0 |
|
SU878081A1 |
METHOD OF PREPARING MONOMERIC-OLIGOMERIC COMPOSITION | 0 |
|
SU794026A1 |
COMPOSITION FOR ELASTIC HEAT-CONDUCTING ADHESIVE | 2014 |
|
RU2568736C1 |
HEAT-RESISTANT PROTECTIVE ORGANOSILICATE COATING FOR NUCLEAR POWER STATION | 2019 |
|
RU2748705C2 |
Authors
Dates
1994-10-30—Published
1991-07-15—Filed