COMPOUND FOR PROTECTING SEMICONDUCTOR CHIPS Russian patent published in 1994 - IPC

Abstract RU 2022396 C1

FIELD: protection of p-n junctions working at heavy currents and heat transfer conditions. SUBSTANCE: wurtzite boron nitride is introduced in compound having the following composition, mass percent: rolivsan MV-1 - 70; toluene - 5; wurtzite boron nitride - 25. EFFECT: improved thermal conductivity. 2 dwg, 1 tbl

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RU 2 022 396 C1

Authors

Tsareva L.G.

Zajtsev B.A.

Lebedinskaja M.F.

Zujkova V.A.

Dates

1994-10-30Published

1991-07-15Filed