COMPOUND FOR PROTECTING SEMICONDUCTOR CHIPS Russian patent published in 1994 - IPC

Abstract RU 2022398 C1

FIELD: protection of p-n junctions against external effects in case of operation at heavy currents. SUBSTANCE: compound is doped with sphalerite boron nitride composition in the following proportion of ingredients, mass percent: rolivsan MV-1 - 70; toluene - 5; sphalerite boron nitride - 25. EFFECT: improved thermal conductivity. 1 tbl

Similar patents RU2022398C1

Title	Year	Author	Number
COMPOUND FOR PROTECTING SEMICONDUCTOR CHIPS	1991	Tsareva L.G. Zajtsev B.A. Lebedinskaja M.F. Zujkova V.A.	RU2022396C1
COMPOUND FOR PROTECTING SEMICONDUCTOR CHIPS	1991	Tsareva L.G. Valjaeva T.K. Zajtsev B.A. Lebedinskaja M.F.	RU2022397C1
METHOD FOR PROTECTION OF SEMICONDUCTOR DEVICES PRIOR TO THEIR SEALING	1990	Tsareva L.G. Zajtsev B.A. Tsygankova T.S. Saenko E.K. Rodionov V.S.	RU2036538C1
COMPOUND PROTECTING P-N JUNCTIONS	1991	Tsareva L.G. Nosukhin S.A. Lebedinskaja M.F.	RU2101802C1
SEMICONDUCTOR DEVICE MANUFACTURING PROCESS	1991	Tsareva L.G. Gavrilova N.S.	RU2069027C1
MICROASSEMBLY MANUFACTURING PROCESS	1992	Tsareva Ljudmila Georgievna	RU2039397C1
ELECTRICALLY INSULATED TAPE AND METHOD FOR MAKING SAME	0	Asnovich L.Z. Berezin V.B. Ogonkov V.G. Trubachev S.G. Petrashko A.I. Shuev G.M. Aleksandrov N.V. Kalinina E.A. Kukulskaya A.N. Bukin B.A.	SU878081A1
SILICONE COMPOUND FOR PRODUCING ELECTRICAL COMPONENTS	2002	Maslov V.A. Rakhmanov A.A. Khofbauehr Eh.I.	RU2234754C2
POLYMER COMPOSITION	1992	Denisov K.A. Solovej B.A. Kravchenko T.P. Kerber M.L. Gorbatkina Ju.A. Kuperman A.M. Puchkov L.V.	RU2017762C1
THERMAL CONDUCTING DIELECTRIC COMPOUND	2017	Belyj Yurij Ivanovich Zajchenko Ivan Ivanovich Chuvilina Lyubov Fedorovna Bryzgalina Galina Vladimirovna Somkin Aleksandr Sergeevich	RU2650818C1

RU 2 022 398 C1

Authors

Tsareva L.G.

Zajtsev B.A.

Dates

1994-10-30—Published

1991-07-15—Filed