SEMICONDUCTOR DEVICE MANUFACTURING PROCESS Russian patent published in 1996 - IPC

Abstract RU 2069027 C1

FIELD: semiconductor engineering. SUBSTANCE: for protective coating of chips, use is made of compound with following proportion of ingredients, %: rolivsan, 90-94; maleic anhydride, 2-3; aromatic solvents, 4-7. Curing is conducted by heat treatment at 190-210 C for 2-0.1 h. Used as aromatic solvents are compounds of series including benzene, toluene, or their mixtures. EFFECT: improved protective coating of device chips. 2 cl

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RU 2 069 027 C1

Authors

Tsareva L.G.

Gavrilova N.S.

Dates

1996-11-10—Published

1991-12-29—Filed