FIELD: chemical machining and passivation of surfaces of semiconductors. SUBSTANCE: sample is subjected to chemical etching, passivating film is formed in oxidizing solution and rinsed in deionized water. Oxidizing solution is prepared with following proportion of components, volume per cent: hydrogen peroxide (30% aqueous solution) 10-90, nitric acid (70% aqueous solution) 10-90. Surface is passivated for 8-20 min. EFFECT: improved treatment of surfaces of semiconductors.
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