METHOD FOR DETERMINING DISLOCATIONS OF DIFFERENT TYPE IN CADMIUM MERCURY TELLURIDE STRUCTURES WITH CRYSTALLOGRAPHIC ORIENTATION (310) Russian patent published in 2019 - IPC C23F1/30 H01L21/306 

FIELD: technological processes.

SUBSTANCE: invention relates to materials science of semiconductors and is intended to control quality of grown heteroepitaxial layers of cadmium-mercury telluride CdHgTe crystallographic orientation (310) when developing process of molecular beam epitaxy (MBE) to identify different types of dislocations in layers of CdHgTe structures. Method for detecting dislocations of various types in cadmium-mercury telluride structures with a crystallographic orientation (310) includes etching in selective etchant No. 1, etching in polishing etchant No. 2, and additional etching in selective etchant No. 1. Selective etchant No. 1 has 24 volume fractions of 25 % aqueous solution of chromium (VI) oxide (CrO₃), 1 volume fraction of hydrochloric acid (HCl) and 8 volume fractions of 5 % solution of citric acid. Polishing etchant No. 2 contains 13 volume fractions of ethylene glycol (C₂H₄(OH)₂), 5 volume fractions of methanol (CH₃OH (95 %)), 2 volume fractions of hydrobromic acid (HBr (47 %)) and 1 volume fraction of hydrogen peroxide (H₂O₂(30 %)).

EFFECT: formation of clearly distinguished forms of etching is ensured, which are well identified with dislocations of certain types.

1 cl, 2 dwg