FIELD: chemistry.
SUBSTANCE: polishing etch composition for mercury cadmium telluride contains the ingredients in the following proportions, volume fractions: methanol (95%) - 5, ethylene glycol - 13, hydrobromic acid (47%) - 2, hydrogen peroxide (30%) - 1. The presented composition provides polishing etching at max. 0.75 mcm/min and enables generating a highest possible quality (no more than 2 nm) mercury cadmium telluride surface.
EFFECT: enhanced characteristics.
4 dwg, 1 tbl
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