SEMICONDUCTOR STRUCTURE BASE PHOTOTRIAC Russian patent published in 1994 - IPC

Abstract RU 2022412 C1

FIELD: optoelectronics. SUBSTANCE: semiconductor structure base phototriac has base regions made in source material layer and accommodating external emitter regions provided with metal contacts and at least one vacant section for light beam access arranged symmetrically in respect to center line or structure symmetry plane; base regions are located on one side of structure symmetrically in respect to center line or its symmetry axis. EFFECT: enlarged functional capabilities. 7 dwg

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RU 2 022 412 C1

Authors

Baklanov Sergej Borisovich

Gajtan Vladimir Vital'Evich

Gurin Nektarij Timofeevich

Dates

1994-10-30Published

1991-12-19Filed