SEMICONDUCTOR DEVICE WITH BUILT-IN PROTECTION IN CONTROL AND LOAD CIRCUITS Russian patent published in 2011 - IPC H01L27/02 

FIELD: electricity.

SUBSTANCE: in semiconductor device with built-in protection against current and voltage steps in control and load circuits, which contains the first three-electrode semiconductor device with negative differential conductivity, has control electrode, and the second semiconductor device with negative differential conductivity, in order to achieve the protection against current and voltage steps in control and load circuits, the second semiconductor device with negative differential conductivity is in-series connected to circuit of control electrode of the first semiconductor device with negative differential conductivity.

EFFECT: improving operating reliability of semiconductor devices controlled with current, including with negative differential conductivity.

3 cl, 5 dwg