NEGATIVE DIFFERENTIAL CONDUCTIVITY BIPOLAR SEMICONDUCTOR POSITION-SENSITIVE PHOTODETECTOR Russian patent published in 2012 - IPC H01L31/11 

FIELD: physics.

SUBSTANCE: disclosed photodetector is a combined device which is based on a negative differential conductivity semiconductor device and a semiconductor structure of a position-sensitive photodetector. To increase the extent of the position sensitivity region, an extended photosensitive semiconductor structure is added to the negative differential conductivity semiconductor device, said structure having a top photosensitive region of first conductivity type with first and second contacts lying on the edges of the region, a second, middle region of second conductivity type and a third, bottom region of first conductivity type with a third contact, connected such that the first contact to the photosensitive region of the extended photosensitive semiconductor structure is connected to the emitter electrode of the negative differential conductivity device, the second contact to the photosensitive region of the extended photosensitive semiconductor structure is connected to the collector electrode, and the third contact of the extended photosensitive semiconductor structure is connected to the base electrode of the negative differential conductivity device.

EFFECT: larger extended position sensitivity region of the negative differential conductivity device.

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