NEGATIVE-CONDUCTIVITY PHOTODETECTOR BUILT AROUND SEMICONDUCTOR STRUCTURE Russian patent published in 2007 - IPC H01L31/111 

FIELD: optoelectronics; negative-conductivity semiconductor photodetectors.

SUBSTANCE: proposed negative-conductivity semiconductor photodetector built around semiconductor structure that can be used as photosensor controlled by one or more light fluxes, as optocoupler photodetector component in automatic-control systems, in switching and conversion engineering for contactless switching and controlling DC and AC circuits has semiconductor regions provided with contacts , some of them being interconnected. First region of second polarity of conductivity and second region of first polarity of conductivity are disposed at one end on first region of first polarity of conductivity. Second region of second polarity of conductivity and third region of first polarity of conductivity are disposed at other end on first region of first polarity of conductivity. Contact of first region of second polarity of conductivity is connected to contact of third region of first polarity of conductivity and contact of second region of second polarity of conductivity is connected to contact of second region of first polarity of conductivity.

EFFECT: provision for positional sensitivity and bi-directional variation of negative-conductivity value in response to spatial position of light flux.

2 cl, 3 dwg