FIELD: digital semiconductor engineering. SUBSTANCE: element has two n- and p-type high-alloy areas and n- or p-type low-alloy area placed between them. Low-alloy area width is selected to be 2 or 3 times greater than maximum diffusion length of minority carriers injected into it from any high-alloy area; doped atoms concentration in low-alloy area is maximum 0.01 at. percent of maximum concentration in any of high-alloy areas. Resistive contacts are provided for low-alloy areas. EFFECT: enlarged functional capabilities. 1 dwg
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