TESTING INTEGRAL CIRCUIT Russian patent published in 1995 - IPC

Abstract RU 2034306 C1

FIELD: semiconductors. SUBSTANCE: device has first and second terminals for connection to power supply, input terminals, identification unit which is connected between first and second terminals. In addition device has first and second units for protection of input terminals. Outputs of said units are connected to corresponding terminals of identification unit and tested object. Identification unit has voltage clipping circuit and fuse. Clipping circuit of identification unit is made of MOSFET transistors which gates are connected to their corresponding drains. EFFECT: increased functional capabilities. 3 dwg, 1 tbl

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RU 2 034 306 C1

Authors

Dong-Su Dzhon[Kr]

Jong-Sik Seok[Kr]

Dates

1995-04-30Published

1990-09-04Filed