VOLTAGE AMPLIFYING CIRCUIT FOR SEMICONDUCTOR STORAGE DEVICE Russian patent published in 1999 - IPC

Abstract RU 2138085 C1

FIELD: electronic engineering. SUBSTANCE: circuit used for amplifying supply voltage VCC fed from system to desired level of amplifying voltage VPP has transmitting transistor shaped in three-pocket manufacturing process. Transmitting transistor possesses bipolar characteristics and functions as bipolar diode. Current flowing to nodal amplifying point does not change even when amplifying voltage across this point rises. EFFECT: improved amplifying efficiency. 4 cl, 5 dwg

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RU 2 138 085 C1

Authors

Khun Choj

Dates

1999-09-20—Published

1994-11-16—Filed